Towards the dynamics of Coulomb blockade in quantum dot via the totally asymmetric simple exclusion process with a single site

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Wipsar Sunu Brams Dwandaru, Denny Darmawan

2016 Advanced Studies in Theoretical Physics Vol. 10 Issue 1 Article Cited by 2

Abstract

The advancement of nanotechnology opens exciting opportunities in the creation of semiconductor fabrication technology. It offers the production of small nano scale systems which consists of only one electron, i.e. quantum dot. The main idea behind a quantum dot is the Coulomb blockade. The dynamical mechanism of the Coulomb blockade can be studied by coupling the quantum dot to two reservoirs, viz. source and drain, at each end of the quantum dot. A potential difference of Vsd between the source and the drain is specified such that an electron asymmetrically tunnels from the source into the dot and out to the drain. The tunneling of the electron also depends on the gate potential, Vg, which is the potential applied to the dot. Based on the aforementioned description, a dynamical model is put forward to capture the qualitative and quantitative physical aspects of the quantum dot. The model is the totally asymmetric simple exclusion process or the TASEP. Here, a connection between the quantum dot and the TASEP in one dimension with a single site is put forward. The hopping rate is connected to the gate potential and the source-drain potential. The dot is the single site lattice, whereas the source and the drain are the reservoirs. From this connection the density and current density of particles may be obtained. © 2015 Wipsar Sunu Brams Dwandaru and Denny Darmawan.

Affiliations

Soft Condensed Matter and Material Research Group, Physics Education Department, Faculty of Mathematics and Natural Science, Yogyakarta State University, Karangmalang Complex, Yogyakarta, 55281, Indonesia