Ariswan, G. El haj Moussa, M. Abdelali, F. Guastavino, C. Llinares
CuIn3Se5 polycrystalline thin films have been prepared by flash evaporation. Their properties have been investigated by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, photoconductivity, optical transmission, Hall effect and four-point probe resistivity measurement. The results showed that the phase of the ordered defect compound CuIn3Se5 has unit cell parameters a and c with values 5.7508 and 11.5769 Å, respectively. It has an optical band gap of 1.23 eV and an optical absorption of about 0.9 × 104 cm-1 for photon energy hν > 3.8 eV. The concentration of majority carriers at room temperature is n = 1.16 × 1015cm-3, the mobility is 4.3 cm2/Vs and the films resistivity is ρn = 1.25 × 1013 Ω cm. © 2002 Elsevier Science Ltd. All rights reserved.
UMR-CNRS-5507, University of Montpellier II, CEM 2, 34060 Montpellier Cedex 05, Pl. E. Bataillon, France; Department of Physics, State University of Yogyakarta, Yogyakarta 55281, Indonesia
